收藏本站
NVTFS5811NL
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
V (BR)DSS
V GS = 0 V, I D = 250 m A
40
V
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 40 V
T J = 25 ° C
T J = 125 ° C
1.0
10
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = " 20 V
" 100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Drain ? to ? Source On Resistance
V GS(TH)
R DS(on)
V GS = V DS , I D = 250 m A
V GS = 10 V, I D = 20 A
1.5
5.8
2.2
6.7
V
m W
V GS = 4.5 V, I D = 20 A
8.8
10
Forward Transconductance
g FS
V DS = 5 V, I D = 10 A
24.6
S
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Total Gate Charge
C iss
C oss
C rss
Q G(TOT)
Q G(TH)
Q GS
Q GD
Q G(TOT)
V GS = 0 V, f = 1.0 MHz,
V DS = 25 V
V GS = 4.5 V, V DS = 32 V, I D = 20 A,
R G = 2.5 W
V GS = 10 V, V DS = 32 V, I D = 20 A
1570
215
157
17
1
5
9
30
pF
nC
nC
nC
SWITCHING CHARACTERISTICS (Note 6)
Turn ? On Delay Time
t d(on)
11
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(off)
t f
V GS = 4.5 V, V DS = 32 V,
I D = 20 A, R G = 2.5 W
55
20
40
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = 20 A
T J = 25 ° C
T J = 125 ° C
0.83
0.70
1.2
V
Reverse Recovery Time
t RR
22
ns
Charge Time
Discharge Time
t a
t b
V GS = 0 V, dI S /dt = 100 A/ m s,
I S = 20 A
12
10
Reverse Recovery Charge
Q RR
17
nC
5. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
NVTFS5820NLTAG MOSFET N-CH 60V 37A 8WDFN
NVTFS5826NLTAG MOSFET N-CH 60V 20A 8WDFN
NX201103 SYNJET ZFLOW 87 LEVEL SELECT 12V
NX300106 HEATSINK 43W TWIST GE INFUSION
NX300119 HEATSINK 70W SPOT CONFIG
NX300131 HEATSINK 58W TWIST MODULE COOLER
NX300146 HEATSINK 82W WALLWASHER RECT
OD-100 EMITTER IR 100MW 880NM TO-39
相关代理商/技术参数
NVTFS5811NLTWG 功能描述:MOSFET Single N-Channel 40V,40A,6.5mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NVTFS5820NL 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:150 mA, Ultra Low Supply Current, Low Dropout Regulator
NVTFS5820NLTAG 功能描述:MOSFET Single N-Channel 60V,29A,11.5mohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NVTFS5820NLTWG 功能描述:MOSFET Single N-Channel 60V,29A,11.5mohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NVTFS5826NL 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:150 mA, Ultra Low Supply Current, Low Dropout Regulator
NVTFS5826NLTAG 功能描述:MOSFET Single N-Channel 60V,20A,24mohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NVTFS5826NLTWG 功能描述:MOSFET Single N-Channel 60V,20A,24mohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NVTFS5826NLWFTAG 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:60 V, 24 m, 20 A, Single Na??Channel